The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Mar. 08, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Kenichi Matsushita, Nonoichi Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor part and first to fourth electrodes. The semiconductor part includes a first layer of a first conductivity type and second and third layers of a second conductivity type. The first and second electrodes are provided on back and front surfaces of the semiconductor part, respectively. The third electrode is provided inside a trench of the semiconductor part. The fourth electrode is provided on the front surface of the semiconductor part. The first layer extends between the first electrode and the second and fourth electrodes. The second layer is provided between the first layer and the second electrode. The third layer is provided between the first layer and the fourth electrode. The third electrode includes an end provided between the third layer and the fourth electrode. The third layer is electrically connected to the second electrode via the third and fourth electrodes.