The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Aug. 16, 2021
Fuji Electric Co., Ltd., Kawasaki, JP;
Hitoshi Abe, Matsumoto, JP;
Hiroshi Miyata, Matsumoto, JP;
Hidenori Takahashi, Matsumoto, JP;
Seiji Noguchi, Matsumoto, JP;
Naoya Shimada, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A semiconductor device includes a plurality of first trenches each having a stripe-shape, extending in parallel to each other, a first mesa region, a second mesa region, a first interlayer insulating film covering the first mesa region and the second mesa region, and a first contact hole penetrating the first interlayer insulating film to the first mesa region, and extending along a longitudinal direction of the first trenches. The first mesa region includes emitter regions of a first conductivity type periodically provided along the longitudinal direction of the first trenches in a plan view, contact regions of a second conductivity type provided such that each of the emitter regions is interposed between the contact regions along the longitudinal direction in the plan view, and a base region of the second conductivity type provided immediately below the emitter regions and the contact regions.