The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

Feb. 10, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Doyoun Park, Suwon-si, KR;

Seulji Song, Suwon-si, KR;

Yoonjong Song, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/24 (2023.02); H10B 63/84 (2023.02);
Abstract

A self-selecting memory device includes a first conductive line on a substrate, a first memory cell on the first conductive line, a second conductive line on the first memory cell, a second memory cell on the second conductive line, and a third conductive line on the second memory cell. The first memory cell includes a first electrode, a first switching memory unit and a second electrode sequentially and vertically stacked. The second memory cell includes a third electrode, a second switching memory unit and a fourth electrode sequentially and vertically stacked. The first switching memory unit includes a first SSM pattern contacting an upper surface of the first electrode and including an OTS material, and a first nitrogen-containing pattern contacting an upper surface of the first SSM pattern and a lower surface of the second electrode and including an OTS material doped with nitrogen.


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