The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

Dec. 20, 2023
Applicant:

Lumentum Operations Llc, San Jose, CA (US);

Inventors:

Guowei Zhao, Milpitas, CA (US);

Matthew Glenn Peters, Menlo Park, CA (US);

Jun Yang, Cupertino, CA (US);

Eric R. Hegblom, Sunnyvale, CA (US);

Assignee:

Lumentum Operations LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/042 (2006.01); H01S 5/34 (2006.01); H01S 5/42 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18361 (2013.01); H01S 5/04256 (2019.08); H01S 5/18311 (2013.01); H01S 5/3416 (2013.01); H01S 5/423 (2013.01);
Abstract

A vertical-cavity surface-emitting laser (VCSEL) array may include an n-type substrate layer and an n-type metal on a bottom surface of the n-type substrate layer. The n-type metal may form a common anode for a group of VCSEL. The VCSEL array may include a bottom mirror structure on a top surface of the n-type substrate layer. The bottom mirror structure may include one or more bottom mirror sections and a tunnel junction to reverse a carrier type within the bottom mirror structure. The VCSEL array may include an active region on the bottom mirror structure and an oxidation layer to provide optical and electrical confinement. The VCSEL array may include an n-type top mirror on the active region, a top contact layer over the n-type top mirror, and a top metal on the top contact layer. The top metal may form an isolated cathode for the VCSEL array.


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