The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Apr. 20, 2022
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/60 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H01L 24/08 (2013.01); H01L 23/60 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 2224/08145 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/30205 (2013.01);
Abstract
A semiconductor memory device includes a first semiconductor layer including a memory cell array; a second semiconductor layer including a first substrate and a page buffer circuit which is configured on the first substrate; a third semiconductor layer disposed between the first semiconductor layer and the second semiconductor layer in a vertical direction, and including a second substrate and a second logic circuit which is configured on an element region of the second substrate; and a first contact plug passing through a coupling region of the second substrate which overlaps the page buffer circuit in the vertical direction.