The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

Mar. 29, 2022
Applicant:

Chengdu Monolithic Power Systems Co., Ltd., Chengdu, CN;

Inventors:

Liwei Hou, Chengdu, CN;

Suwei Wang, Chengdu, CN;

Heng Li, Chengdu, CN;

Ze-Qiang Yao, Santa Clara, CA (US);

Junjian Zhao, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 23/528 (2013.01);
Abstract

Integrated circuit ('IC') unit and a wafer for fabricating IC units. The wafer has a first surface and a second surface opposite to the first surface. A redistribution metal layer may be formed on the first surface and may be patterned to have a redistribution metal layer pattern. A backside metal layer may be formed on the second surface and patterned to have a backside metal layer pattern so that the backside metal layer may be adapted to generate a backside stress on the wafer to at least partially offset a front side stress generated by the redistribution metal layer on the wafer.


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