The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

Apr. 27, 2021
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Masaharu Nakanishi, Kyoto, JP;

Noriaki Kawamoto, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01); H01L 23/00 (2006.01); H01L 23/495 (2006.01); H10D 84/80 (2025.01);
U.S. Cl.
CPC ...
H01L 23/34 (2013.01); H01L 23/49562 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H10D 84/811 (2025.01); H01L 2224/32245 (2013.01); H01L 2224/48245 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/12036 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/182 (2013.01);
Abstract

A semiconductor device includes: a switching element including a drain electrode, a gate electrode, and a source electrode; a base supporting the switching element; and a first terminal, a second terminal, a third terminal, and a fourth terminal that each extend in the same direction. The switching element includes a temperature detection diode having a first electrode provided on the element obverse surface. Each of the drain electrode, the gate electrode, and the source electrode is electrically connected to a corresponding one of the first terminal, the second terminal, and the third terminal. The first electrode is electrically connected to the fourth terminal via a first wire.


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