The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

Jun. 28, 2021
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Joseph R. Abel, West Linn, OR (US);

Bart J. Van Schravendijk, Palo Alto, CA (US);

Ian John Curtin, Portland, OR (US);

Douglas Walter Agnew, Portland, OR (US);

Dustin Zachary Austin, Tigard, OR (US);

Awnish Gupta, Hillsboro, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/0228 (2013.01); H01L 21/76814 (2013.01); H01L 21/76837 (2013.01);
Abstract

Methods of forming air gaps in hole and trench structures are disclosed. The methods may be used to form buried voids, i.e., voids for which the top is below the top of the adjacent features. The methods include inhibition of the hole or trench structures and selective deposition at the top of the structure forming an air gap within the structures. In some embodiments, the methods are to reduce intra-level capacitance in semiconductor devices.


Find Patent Forward Citations

Abel, Joseph. (2025). Reducing intralevel capacitance in semiconductor devices (U.S. Patent No. 12417943). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12417943

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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