The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

Dec. 09, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Shiva Rai, Fremont, CA (US);

Alfredo Granados, San Antonio, TX (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H10F 71/00 (2025.01); H10F 77/124 (2025.01); H10F 77/14 (2025.01); H10F 77/30 (2025.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/821 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01); H10H 20/84 (2025.01);
U.S. Cl.
CPC ...
H01L 21/30621 (2013.01); H01J 37/32449 (2013.01); H01L 21/67069 (2013.01); H10F 71/1272 (2025.01); H10F 71/1274 (2025.01); H10F 71/1276 (2025.01); H10F 77/1248 (2025.01); H10F 77/12485 (2025.01); H10F 77/146 (2025.01); H10F 77/147 (2025.01); H10F 77/306 (2025.01); H10F 77/311 (2025.01); H10H 20/0133 (2025.01); H10H 20/01335 (2025.01); H10H 20/812 (2025.01); H10H 20/821 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01); H10H 20/84 (2025.01); H01J 2237/332 (2013.01); H01J 2237/3341 (2013.01); H10H 20/034 (2025.01);
Abstract

Methods and apparatus for processing a photonic device are provided herein. For example, methods include etching, using a plasma etch process that uses a first gas, a first epitaxial layer of material of the photonic device comprising a base layer comprising at least one of silicon, germanium, sapphire, aluminum indium gallium arsenide (AlInGaAs), aluminum indium gallium phosphide (AlInGaP), aluminum indium gallium nitride (AlInGaN), aluminum indium gallium arsenide phosphide (AlInGaAsP), depositing, using a plasma deposition process that uses a second gas different from the first gas, a first dielectric layer over etched sidewalls of the first epitaxial layer of material, etching, using the first gas, a second epitaxial layer of material of the photonic device, and depositing, using the second gas, a second dielectric layer over etched sidewalls of the second epitaxial layer of material.


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