The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

Dec. 17, 2020
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Chihiro Kawahara, Rennes, FR;

Julio Brandelero, Rennes, FR;

Stefan Mollov, Rennes, FR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01K 3/00 (2006.01); G01K 7/18 (2006.01); G01K 7/34 (2006.01);
U.S. Cl.
CPC ...
G01K 3/005 (2013.01); G01K 7/183 (2013.01); G01K 7/34 (2013.01); G01K 2217/00 (2013.01);
Abstract

The present invention concerns a device and a method for sensing an over-temperature of a power semiconductor. The invention: provides a current pulse source through control electrodes of the power semiconductor, duplicates the current provided by the current pulse source and provides the duplicated current to an emulating device, compares the voltage across the control electrodes to the voltage across the emulating device, notifies the result of the comparison.


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