The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
May. 10, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Incheon National University Research & Business Foundation, Incheon, KR;
Eunhyoung Cho, Suwon-si, KR;
Sunghee Lee, Suwon-si, KR;
Jeongyub Lee, Yongin-si, KR;
Han-Bo-Ram Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATION, Incheon, KR;
Abstract
A method and an apparatus for filling a gap by using an atomic layer deposition (ALD) method are provided. The method includes forming a first reaction inhibition layer on a side wall of the gap; forming a first precursor layer by adsorbing a first reactant into a bottom of the gap and the side wall of the gap around the bottom of the gap; and forming a first atomic layer on the bottom of the gap and the side wall of the gap around the bottom of the gap by adsorbing a second reactant into the first precursor layer. The forming of the first reaction inhibition layer may include adsorbing a first reaction inhibitor into the side wall of the gap; and forming a second reaction inhibitor by removing a specific ligand from the first reaction inhibitor.