The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

Nov. 18, 2021
Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Masahiro Takata, Kanagawa, JP;

Masashi Ono, Kanagawa, JP;

Shunsuke Kitajima, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/66 (2006.01); C09K 11/02 (2006.01); H04N 23/20 (2023.01); H04N 25/70 (2023.01); H10K 30/35 (2023.01); H10K 30/87 (2023.01); H10K 39/32 (2023.01); H10K 85/30 (2023.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C09K 11/661 (2013.01); C09K 11/025 (2013.01); H04N 23/20 (2023.01); H04N 25/70 (2023.01); H10K 30/35 (2023.02); H10K 30/87 (2023.02); H10K 39/32 (2023.02); H10K 85/30 (2023.02); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01);
Abstract

A photodetector element has a photoelectric conversion layer containing aggregates of semiconductor quantum dots QD1 that contain a metal atom and containing a ligand L1 that is coordinated to the semiconductor quantum dot QD1, and a hole transport layer containing aggregates of semiconductor quantum dots QD2 that contains a metal atom and containing a ligand L2 that is coordinated to the semiconductor quantum dot QD2, the hole transport layer being arranged on the photoelectric conversion layer, where the ligand L2 includes a ligand represented by any one of Formulae (A) to (C).


Find Patent Forward Citations

Loading…