The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Jan. 21, 2022
Free Form Fibers, Llc, Saratoga Springs, NY (US);
Shay L. Harrison, East Schodack, NY (US);
John L. Schneiter, Cohoes, NY (US);
Joseph Pegna, Saratoga Springs, NY (US);
Ram K. Goduguchinta, Ballston Lake, NY (US);
Kirk L. Williams, Saratoga Springs, NY (US);
Erik G. Vaaler, Redwood City, CA (US);
Free Form Fibers, LLC, Saratoga Springs, NY (US);
Abstract
A method of forming a high purity ingot for wafer production, such as a silicon carbidewafer. Precursors are added to a reactor; at least part of a fiber is formed in the reactor from the precursors using chemical deposition interacting with the precursors; and granular material is then formed from the fiber. The method further includes forming the ingot from the granular material. In one aspect, the chemical deposition can include laser induced chemical vapor deposition. Further, the method can include separating one or more wafers from the ingot for use in semiconductor fabrication.