The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

Jul. 15, 2021
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Andre Brockmeier, Villach, AT;

Barbara Angela Glanzer, Klagenfurt, AT;

Marten Oldsen, Anzing, DE;

Francesco Solazzi, Villach, AT;

Carsten Von Koblinski, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); B81B 3/00 (2006.01); B81B 7/02 (2006.01); B81C 1/00 (2006.01); G01L 9/00 (2006.01); G01L 19/06 (2006.01); H04R 1/04 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0032 (2013.01); B81B 3/0021 (2013.01); B81B 7/0041 (2013.01); B81B 7/0058 (2013.01); B81B 7/0061 (2013.01); B81B 7/007 (2013.01); B81B 7/0074 (2013.01); B81B 7/02 (2013.01); B81C 1/00293 (2013.01); B81C 1/00357 (2013.01); G01L 9/0042 (2013.01); G01L 19/0636 (2013.01); G01L 19/0654 (2013.01); H04R 1/04 (2013.01); B81B 2201/0257 (2013.01); B81B 2201/0264 (2013.01); B81C 2201/0133 (2013.01); H04R 2201/003 (2013.01);
Abstract

The semiconductor device includes a microelectromechanical system (MEMS) chip having a first main surface and a second main surface situated opposite the first main surface, a first glass-based substrate, on which the MEMS chip is arranged by its first main surface, and a second substrate, which is arranged on the second main surface of the MEMS chip, wherein the MEMS chip has a first recess connected to the surroundings by way of a plurality of perforation holes arranged in the first substrate.


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