The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Jun. 23, 2020
Robert Bosch Gmbh, Stuttgart, DE;
Daniel Monteiro Diniz Reis, Esslingen Am Neckar, DE;
Daniel Pantel, Mundelsheim, DE;
Frank Schatz, Kornwestheim, DE;
Jochen Tomaschko, Gaeufelden, DE;
Mathias Mews, Reutlingen, DE;
Timo Schary, Aichtal-Neuenhaus, DE;
ROBERT BOSCH GMBH, Stuttgart, DE;
Abstract
A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. A first defect type and a second defect type, which is different from the first defect type, are also present in dielectric layer. The at least two different defect types accumulate at one of the two electrodes as a function of a main operating voltage applied between the first electrode and the second electrode, and of a main operating temperature that is present at characteristic times τand τ, and generate the maximum changes in barrier height δΦand δΦat the electrodes. τand δΦare associated with the first defect type, and τand δΦare associated with the second defect type. τ<τand δΦ<δΦapply.