The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2025

Filed:

Dec. 11, 2023
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Dong-Il Chu, Gimpo-si, KR;

Min-Joo Kim, Seoul, KR;

Jae-Won Lee, Goyang-si, KR;

Sang-Hoon Pak, Seoul, KR;

Sang-Hyuk Won, Gimpo-si, KR;

Seung-Hyun Youk, Paju-si, KR;

Seon-Hee Lee, Incheon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 29/14 (2025.01); H10D 30/67 (2025.01); H10H 20/815 (2025.01); H10H 20/831 (2025.01); H10H 20/857 (2025.01);
U.S. Cl.
CPC ...
H10H 29/142 (2025.01); H10D 30/6713 (2025.01); H10D 30/6755 (2025.01); H10H 20/815 (2025.01); H10H 20/831 (2025.01); H10H 20/857 (2025.01);
Abstract

A display apparatus can include a substrate having a penetrating area and a separating area, the penetrating area including a substrate hole, a first buffer layer having a first-buffer lower layer, and a first-buffer upper layer, a first thin film transistor including a first semiconductor pattern, a first gate electrode, and a first source electrode and a first drain electrode, a first interlayer insulating film; a second interlayer insulating film, an opening extending through the second interlayer insulating film, the first interlayer insulating film, the first gate insulating film and the first-buffer upper layer, and a separation structure in the opening, the separation structure including a first separation layer having a same stacked structure as the first-buffer upper layer, a second separation layer having a same stacked structure as the first gate insulating film, and a third separation layer having a same stacked structure as the first gate electrode.


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