The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2025

Filed:

Aug. 18, 2022
Applicant:

Auo Corporation, Hsinchu, TW;

Inventors:

Yi-Hong Chen, Hsinchu, TW;

Chia-An Lee, Hsinchu, TW;

Kuan-Heng Lin, Hsinchu, TW;

Assignee:

AUO Corporation, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/831 (2025.01); H10H 20/80 (2025.01); H10H 20/84 (2025.01); H10H 20/855 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8314 (2025.01); H10H 20/84 (2025.01); H10H 20/855 (2025.01); H10H 20/882 (2025.01);
Abstract

A light emitting device includes a semiconductor structure, an insulating layer, a first electrode, a second electrode, and a third electrode. The semiconductor structure includes a first type semiconductor layer, a second type semiconductor layer, and an active layer disposed between the first type semiconductor layer and the second type semiconductor layer. The insulating layer is disposed on the semiconductor structure. The first electrode is electrically connected to the first type semiconductor layer. The second electrode is electrically connected to the second type semiconductor layer. The first electrode, the second electrode, and the third electrode are structurally separated. The third electrode at least has a first portion. The first portion of the third electrode is disposed on a side wall of the semiconductor structure, and the insulating layer is located between the third electrode and the semiconductor structure.


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