The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
May. 29, 2023
Contemporary Amperex Technology (Hong Kong) Limited, Hong Kong, CN;
Shuojian Su, Ningde, CN;
Zhaohui Liu, Ningde, CN;
Yandong Wang, Ningde, CN;
Yanfen Wang, Ningde, CN;
Yongsheng Guo, Ningde, CN;
Guodong Chen, Ningde, CN;
Chuying Ouyang, Ningde, CN;
CONTEMPORARY AMPEREX TECHNOLOGY (HONG KONG) LIMITED, Hong Kong, CN;
Abstract
This application provides an A/M/X crystalline material, a photovoltaic device, and preparation methods thereof. The photovoltaic device includes a photoactive crystalline material layer (). The photoactive crystalline material layer () includes a penetrating crystal grain (), where the penetrating crystal grain () is a crystal grain penetrating through the photoactive crystalline material layer (), and a percentage p of a quantity of penetrating crystal grains () in a total quantity of crystal grains of the photoactive crystalline material layer () is ≥80%. The photoactive crystalline material layer () includes a backlight side () and a backlight crystal grain (), where the backlight crystal grain () is a crystal grain exposed to the backlight side () and has a backlight crystal face exposed to the backlight side (). At least one region of the backlight side () has an average flatness index Rbeing ≤75.