The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Jul. 08, 2021
Applicant:
Sumco Corporation, Tokyo, JP;
Inventors:
Ryo Hirose, Tokyo, JP;
Takeshi Kadono, Tokyo, JP;
Assignee:
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); C30B 25/18 (2006.01); C30B 25/20 (2006.01); C30B 29/06 (2006.01); C30B 31/22 (2006.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01);
U.S. Cl.
CPC ...
H10F 39/028 (2025.01); C30B 25/186 (2013.01); C30B 25/20 (2013.01); C30B 29/06 (2013.01); C30B 31/22 (2013.01); H10F 39/199 (2025.01);
Abstract
A method of producing an epitaxial silicon wafer includes irradiating a surface of a silicon wafer with a beam of cluster ions containing SiHions (at least one of the integers 1 to 3 is selected as x of the SiHions) and CHions (at least one of the integers 2 to 5 is selected as y of the CHions) to form a modified layer that is located in a surface layer portion of the silicon wafer and that contains as a solid solution of the constituent elements of the cluster ion beam, and further includes forming a silicon epitaxial layer on the modified layer of the silicon wafer. The dose of the SiHions is 1.5×10ions/cmor more.