The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2025

Filed:

Sep. 16, 2022
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Adrian Finney, Villach, AT;

Oliver Blank, Villach, AT;

Alessandro Ferrara, Villach, AT;

Stefan Tegen, Dresden, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/00 (2025.01); H10D 30/66 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 64/117 (2025.01); H10D 30/665 (2025.01); H10D 30/668 (2025.01); H10D 62/102 (2025.01); H10D 64/115 (2025.01);
Abstract

The application relates to a semiconductor die including a device in an active area of the die. The device includes a field electrode region formed in a field electrode trench extending vertically into a semiconductor body. The field electrode region includes a first and a second field electrode stacked vertically above each other in the field electrode trench. An edge termination structure laterally between the active area and a lateral edge region of the die includes a first and a second shield electrode arranged laterally consecutive between the active area and the lateral edge region to stepwise decrease an electrical potential between the edge region and the active area.


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