The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Sep. 22, 2022
Fuji Electric Co., Ltd., Kawasaki, JP;
Takeyoshi Nishimura, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A method of manufacturing a silicon carbide semiconductor device includes selectively forming a semiconductor region of a conductivity type at a first main surface of a semiconductor substrate containing silicon carbide; forming a nickel layer above the semiconductor region; ion-implanting aluminum in the nickel layer; performing a heat treatment to the nickel layer implanted with the aluminum to thereby form an ohmic contact layer in ohmic contact with the semiconductor region; forming a first electrode that is in contact with the ohmic contact layer, the semiconductor region, and the semiconductor substrate; and forming a second electrode on a second main surface of the semiconductor substrate.