The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2025

Filed:

Mar. 16, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Yu-Ping Chen, New Taipei, TW;

Jhen-Yu Tsai, Kaohsiung, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10B 12/488 (2023.02); H10B 12/053 (2023.02); H10D 64/01 (2025.01); H10D 64/513 (2025.01); H10D 64/518 (2025.01);
Abstract

The present application provides a method for manufacturing a memory device having a word line (WL) with dual conductive materials. The method includes steps of providing a semiconductor substrate with an active area defined adjacent to a surface of the semiconductor substrate; forming a recess extending from the surface into the semiconductor substrate; disposing a first insulating layer conformal to the recess; disposing a first conductive material within the recess and surrounded by the first insulating layer; removing a portion of the first conductive material to form a first conductive member; disposing a second insulating layer within the recess and conformal to the first insulating layer and the first conductive member; and disposing a second conductive material within the recess and surrounded by the second insulating layer to form a second conductive member adjacent to the first conductive member.


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