The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2025

Filed:

Aug. 31, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyeran Lee, Hwaseong-si, KR;

Sohyun Park, Seoul, KR;

Kyoungcho Na, Hwaseong-si, KR;

Seryeun Yang, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10B 12/482 (2023.02);
Abstract

A semiconductor device includes: a stack including a conductive structure and an insulation structure stacked on each other on a substrate, wherein the stack extends in a first direction substantially parallel to an upper surface of the substrate; first, second and third spacers sequentially stacked on each other on a sidewall of the stack in a second direction substantially parallel to the upper surface of the substrate and crossing the first direction; and a capping pattern disposed on the second spacer, wherein: the second spacer is an air spacer including air, and an upper surface of a portion of the third spacer is substantially coplanar with an upper surface of the capping pattern.


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