The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2025

Filed:

Feb. 11, 2022
Applicant:

Creeled, Inc., Durham, NC (US);

Inventors:

Seth Joseph Balkey, Durham, NC (US);

Steven Wuester, Wake Forest, NC (US);

Michael Check, Holly Springs, NC (US);

Assignee:

CreeLED, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/075 (2006.01); G10L 15/26 (2006.01); G10L 15/28 (2013.01); H04R 1/02 (2006.01); H04R 1/04 (2006.01); H10H 20/856 (2025.01); H10H 20/857 (2025.01);
U.S. Cl.
CPC ...
H04R 1/04 (2013.01); G10L 15/26 (2013.01); G10L 15/28 (2013.01); H01L 25/0753 (2013.01); H04R 1/025 (2013.01); H10H 20/856 (2025.01); H10H 20/857 (2025.01);
Abstract

Light-emitting diodes (LEDs), and more particularly contact structures of LED chips for improved current injection are disclosed. Exemplary LED chips include an n-contact structure that forms part of a cathode connection. N-contact structures are provided that form a grid structure that is electrically coupled at an n-type layer across the LED chip so that current is coupled to and spread along the n-type layer. N-contact structures are provided that reside along streets formed between active LED structure mesas. N-contact structures are provided that are embedded within one or more layers of an LED chip, including reflective layers and/or dielectric layers. By providing such n-contact structures along the n-type layer, increased contact between the n-type layer and the n-contact structure may promote improved current spreading and/or current injection while also providing increased thermal spreading in LED chips. Additionally, increased edge profiles of active LED structure mesas may provide increased light extraction.


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