The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Jan. 09, 2024
Yuan-ju Chao, Cupertino, CA (US);
John H Yu, San Jose, CA (US);
Krishnamurthy Subramanian, Saratoga, CA (US);
Yuan-Ju Chao, Cupertino, CA (US);
John H Yu, San Jose, CA (US);
Krishnamurthy Subramanian, Saratoga, CA (US);
PIMIC, Inc., Cupertino, CA (US);
Abstract
A charge-injection SAR ADC device has a modified charge-injection cell (CIC), and a complementary to absolute temperature (CTAT) circuit for generating a bias voltage. The CIC and CTAT circuits cooperate to correct for process, voltage, and temperature (PVT) variation that affect SAR ADC input full scale. The CIC has been modified to have transistors that are in a cascoded relationship with transistors operating to maintain a reservoir of charge. The CTAT circuit is designed to substantially replicate the CIC, and it tracks the CIC operation to correct variations in transistor threshold voltage due to variations in PVT.