The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Feb. 16, 2023
Xilinx, Inc., San Jose, CA (US);
Sasi Rama Subrahmanyam Lanka, Challapalli, IN;
Hari Bilash Dubey, Hyderabad, IN;
Vss Prasad Babu Akurathi, Hyderbad, IN;
XILINX, INC., San Jose, CA (US);
Abstract
The Hot Carrier Injection effect is a phenomenon present in semiconductor devices, where charges are trapped in the gate oxide region and degrade the device. Hot carrier Injection (HCI) is one of the major problems in lower voltage technologies due to lower voltage tolerance limits of MOS devices. Due to this HCI effect, designing high voltage, wide range (i.e., supply voltage ranges: 3.3 v, 2.5 v, and 1.8 v) I/O buffers has become challenging. The HCI effect is common in input/output (I/O) buffers that use bias generation circuits for wide voltage ranges. Disclosed here are methods and systems employed to provide reliable bias generation in an I/O buffer or other semiconductor circuit. This limits the device drain to source voltage (Vds) in the bias circuits and I/O buffer so as to mitigate the hot carrier Injection (HCI) effect.