The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Jul. 27, 2020
Applicants:
University of Southampton, Hampshire, GB;
University College London, London, GB;
Inventors:
Frederic Gardes, Southampton, GB;
Alwyn John Seeds, London, GB;
Huiyun Liu, London, GB;
Siming Chen, London, GB;
Assignees:
UNIVERSITY OF SOUTHAMPTON, , GB;
UNIVERSITY COLLEGE LONDON, , GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/343 (2006.01); G02B 6/12 (2006.01); G02B 6/13 (2006.01); H01S 5/02 (2006.01); H01S 5/026 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01S 5/343 (2013.01); G02B 6/12004 (2013.01); G02B 6/131 (2013.01); H01S 5/021 (2013.01); H01S 5/026 (2013.01); H01S 5/341 (2013.01); G02B 2006/12061 (2013.01);
Abstract
A semiconductor device for use in an optoelectronic integrated circuit; the device comprising: a group four substrate, a waveguide, and a group III/V multilayer stack; wherein the group III/V multilayer stack comprises a quantum component for producing light for the waveguide; wherein the waveguide comprises a material with a deposition temperature below 550 degrees Celsius and a refractive index of any value between 1.3 and 3.8.