The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Dec. 17, 2019
Applicant:
Ecole Polytechnique Federale DE Lausanne (Epfl), Lausanne, CH;
Inventors:
Elison De Nazareth Matioli, Lausanne, CH;
Remco Franciscus Peter Van Erp, Lausanne, CH;
Assignee:
Ecole Polytechnique Federale De Lausanne (EPFL), Lausanne, CH;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/473 (2006.01); B81C 1/00 (2006.01); H01L 21/764 (2006.01); H01L 23/46 (2006.01);
U.S. Cl.
CPC ...
H01L 23/473 (2013.01); B81C 1/00071 (2013.01); H01L 21/764 (2013.01); H01L 23/46 (2013.01);
Abstract
The present invention relates to a method for fabricating an integrated electronic device with a microchannel, comprising the steps of: —Providing a homogeneous or heterogeneous substrate with one or more layers of material, respectively; —Forming at least one trench in the upper surface and through the upper layer using an etching process, particularly using a high aspect ratio etching process; —Sealing the trench by closing the opening of the trench on an upper surface of the upper layer.