The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
May. 06, 2025
Destination 2d Inc., Milpitas, CA (US);
Ravi Iyengar, Milpitas, CA (US);
Kaustav Banerjee, Goleta, OR (US);
Brian Cronquist, Klamath Falls, OR (US);
Destination 2D Inc., San Jose, CA (US);
Abstract
A diffusion-couple synthesis method using a graphene synthesis tool (GST) including: providing a substrate-load (SL) which includes first-prepared substrate (fPS) and second-prepared-substrate (sPS), where fPS includes a first-carbon-source (fCS), a first-sacrificial-diffusion layer (fSDL), and a first-device-level (fDL), where a first-dielectric-layer (fDiLy) is disposed atop fDL, where fSDL is disposed directly atop fDiLy, where fCS is disposed directly atop the fSDL, and where the sPS includes a secondCS, a secondSDL, and a secondDL, where secondDL is disposed atop the secondDL, where the secondSDL is disposed atop secondDiLy, where secondCS is disposed atop secondSDL; providing a GST capable of applying pressure and temperature to SL within a process chamber (PC); placing SL within PC; applying the pressure and the temperature to SL, where sPS is inverted and disposed above fPS, where fCS is in direct contact with secondCS; forming graphene at a first interface between the fDiLy and the fSDL and at a second interface between secondDiLy and secondSDL.