The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Nov. 09, 2023
Shanghaitech University, Shanghai, CN;
SHANGHAITECH UNIVERSITY, Shanghai, CN;
Abstract
An energy-efficient memory for cryogenic computing is provided. The energy-efficient memory includes a plurality of memory banks, where each of the memory banks includes a cryogenic semi-static, dual-port, boost-free gain cell (CSDB-GC) macro module, a universal address decoder, and a different address decoder. The CSDB-GC macro module includes a plurality of columns of local blocks, and each of the local blocks includes a plurality of CSDB-GC memory cells. A final measurement result of a 16 Kb CSDB-eDRAM shows that the 16 Kb CSDB-eDRAM achieves data retention time (DRT) of 16.67 seconds, which is 2.6 times longer than DRT of a state-of-the-art cryogenic eDRAM at a temperature of 4.2 K, and achieves lower refresh power (0.11 pW/Kb). In addition, the 16 Kb CSDB-eDRAM also achieves shorter access time, namely, 710 ps (1.41 GHz). Compared with the state-of-the-art work, the 16 Kb CSDB-eDRAM has a lowest dynamic power consumption overhead, namely, 49.23 uW/Kb.