The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Jan. 14, 2025
Huazhong University of Science and Technology, Wuhan, CN;
Huazhong University of Science and Technology, Wuhan, CN;
Abstract
Provided is a dynamic memory structure and an operating method thereof. The dynamic memory structure includes a write gating device, a read gating device, and a capacitor. A first terminal of the write gating device, a first terminal of the read gating device, and a first terminal of the capacitor are connected together; a second terminal of the write gating device is a data writing end; a second terminal of the read gating device is a data reading end; and a second terminal of the capacitor is a gating end and connected to a word line. The write gating device and the read gating device are both unidirectionally conducted, and conduction modes of the write gating device and the read gating device are both threshold-on. A conduction threshold voltage of the write gating device is less than a conduction threshold voltage of the read gating device.