The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Sep. 16, 2021
Ionq, Inc., College Park, MD (US);
Ming Li, Silver Spring, MD (US);
Kenneth Wright, Berwyn Heights, MD (US);
Neal C. Pisenti, Laurel, MD (US);
Kristin Marie Beck, Livermore, CA (US);
Jason Hieu Van Nguyen, Hyattsville, MD (US);
Yunseong Nam, North Bethesda, MD (US);
IONQ, INC., College Park, MD (US);
Abstract
A method of performing a quantum gate operation in an ion trap quantum computing system includes identifying one or more error mechanisms that cause a quantum computational error in a quantum gate operation on a first trapped ion of an ion chain comprising a plurality of trapped ions, wherein the quantum gate operation is performed by applying a first Raman laser beam and a second Raman laser beam, computing a first amplitude of the first Raman laser beam, and a second amplitude of the second Raman laser beam such that the effect of the identified one or more error mechanisms is accounted for, and applying the first Raman laser beam having the computed first amplitude and the second Raman laser beam having the computed second amplitude on the first trapped ion to perform the quantum gate operation on the first trapped ion.