The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2025

Filed:

Oct. 21, 2021
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Toshiya Tadakuma, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 30/367 (2020.01); G06F 119/06 (2020.01); H03K 17/567 (2006.01); H03K 17/687 (2006.01); H10D 12/00 (2025.01);
U.S. Cl.
CPC ...
G06F 30/367 (2020.01); H03K 17/567 (2013.01); H03K 17/687 (2013.01); H10D 12/481 (2025.01); G06F 2119/06 (2020.01);
Abstract

An object of the present disclosure is to accurately simulate the operation of a CSTBT. The simulation model of a CSTBT includes a MOSFET, a diode whose cathode is connected to the drain of the MOSFET, capacitance Cconnected between a source and a gate of the MOSFET, capacitance Cconnected between a gate of the MOSFET and an anode of the diode, capacitance Cconnected between a source of the MOSFET and the anode of the diode, capacitance Cconnected between the drain and the gate of the MOSFET, and a behavioral power source Vconnected in series to the capacitance Cbetween the drain and the gate of the MOSFET. The behavioral power source Vperforms a switching operation when gate-emitter voltage Vof the CSTBT reaches a predetermined threshold value.


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