The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
May. 11, 2022
Method of predicting characteristic of semiconductor device and computing device performing the same
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jonghyun Lee, Hwaseong-si, KR;
Gwangnae Gil, Yongin-si, KR;
Seyoung Park, Hwaseong-si, KR;
Sola Woo, Gwacheon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
To predict characteristics of a semiconductor device, a simulation current-voltage curve of the semiconductor device is generated using compact models where each compact model generates simulation result data by performing a simulation based on device data. The simulation result data indicate characteristics of semiconductor devices corresponding to the device data. The compact models respectively corresponding to process data and semiconductor products. Simulation reference points on the simulation current-voltage curve are extracted. Basic training data corresponding to a combination of the simulation reference points and the simulation current-voltage curve are generated. A deep learning model is trained based on the basic training data such that the deep learning model outputs a prediction current-voltage curve. A target prediction current-voltage curve is generated based on the deep learning model and target reference points corresponding to the target semiconductor product. The deep learning model is a generative adversarial network.