The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2025

Filed:

Dec. 15, 2023
Applicant:

Wenzhou University, Zhejiang, CN;

Inventors:

Pengjun Wang, Zhejiang, CN;

Xiangyu Li, Zhejiang, CN;

Bo Chen, Zhejiang, CN;

Hao Ye, Zhejiang, CN;

Assignee:

Wenzhou University, Zhejiang, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 33/00 (2006.01); G01R 33/09 (2006.01);
U.S. Cl.
CPC ...
G01R 33/0029 (2013.01); G01R 33/098 (2013.01);
Abstract

A signal processing circuit for a tunneling magnetoresistance sensor comprises thirty-eight MOS transistors, two capacitors and ten switches. A first switch, a second switch, a third switch, a fourth switch, a first MOS transistor, a second MOS transistor, a third MOS transistor and a fourth MOS transistor form a high-frequency modulation circuit. A fifth switch, a sixth switch, a seventh switch, an eighth switch, a seventeenth transistor, a twenty-second MOS transistor and a twenty-third MOS transistor form a high-frequency demodulation circuit. A signal output by a tunneling magnetoresistance sensor is modulated to a chopping frequency by the high-frequency modulation circuit, and is then demodulated by the high-frequency demodulation circuit.


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