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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12410507 B1

PDFFull Text
Date of Patent:
Sep. 09, 2025

Filed:

Jun. 13, 2022

Mask group, method of manufacturing organic device and organic device

Applicant:

Dai Nippon Printing Co., Ltd., Tokyo, JP;

Inventors:

Yusuke Nakamura, Tokyo, JP;

Isao Miyatani, Tokyo, JP;

Naoki Nishimura, Tokyo, JP;

Hiroshi Yano, Tokyo, JP;

Assignee:

Dai Nippon Printing Co., Ltd., Tokyo, JP;

Attorney:

BURR PATENT LAW, PLLC

Primary Examiner:

Natalia A Gondarenko

Int. Cl.
CPC ...
C23C 14/04 (2006.01); H10K 50/82 (2023.01); H10K 59/121 (2023.01); H10K 59/65 (2023.01); H10K 59/80 (2023.01); H10K 71/00 (2023.01);
U.S. Cl.
CPC ...
C23C 14/042 (2013.01); H10K 50/82 (2023.02); H10K 59/121 (2023.02); H10K 59/65 (2023.02); H10K 59/80521 (2023.02); H10K 71/00 (2023.02); H10K 71/621 (2023.02);
Abstract

A mask group may include two or more masks. When a section in a normal direction is viewed, a region-defining straight line may be defined as a straight line that forms an angle θ together with a first surface. The region-defining straight line may intersect the first surface at a first intersection point. An effective region may be defined as a region inside the first intersection point in the through-hole, and a peripheral region may be defined as a region outside the first intersection point in the through-hole. The angle θ may be 35° or more and 70° or less. The penetration region in the second mask region may include a hole overlapping region in which the through-holes of two masks overlap. The hole overlapping region may include a first hole overlapping region in which the peripheral regions of the through-holes of the two masks overlap.

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