The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Oct. 07, 2019
Applicant:
Tosoh Corporation, Shunan, JP;
Inventors:
Assignee:
TOSOH CORPORATION, Shunan, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C04B 35/58 (2006.01); C04B 35/626 (2006.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
C04B 35/58 (2013.01); C04B 35/62645 (2013.01); C23C 14/3414 (2013.01); C04B 2235/401 (2013.01); C04B 2235/404 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5454 (2013.01); C04B 2235/77 (2013.01);
Abstract
The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them. A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.