The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2025

Filed:

Jan. 04, 2023
Applicant:

Fujifilm Dimatix, Inc., Lebanon, NH (US);

Inventors:

Gregory Debrabander, San Jose, CA (US);

Mark Nepomnishy, San Jose, CA (US);

Assignee:

FUJIFILM Dimatix, Inc., Lebanon, NH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B41J 2/16 (2006.01); B41J 2/14 (2006.01);
U.S. Cl.
CPC ...
B41J 2/162 (2013.01); B41J 2/1625 (2013.01); B41J 2/1628 (2013.01); B41J 2/1631 (2013.01); B41J 2002/14475 (2013.01);
Abstract

Techniques are provided for making a funnel-shaped nozzle in a substrate. The process can include forming a first opening having a first width in a top layer of a substrate, forming a patterned layer of photoresist on the top surface of the substrate, the patterned layer of photoresist including a second opening, the second opening having a second width larger than the first width, reflowing the patterned layer of photoresist to form curved side surfaces terminating on the top surface of the substrate, etching a second layer of the substrate through the first opening in the top layer of the substrate to form a straight-walled recess, the straight-walled recess having the first width and a side surface substantially perpendicular to the top surface of the semiconductor substrate.


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