The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Dec. 08, 2021
International Business Machines Corporation, Armonk, NY (US);
Nicholas Torleiv Bronn, Long Island City, NY (US);
Thorsten Muehge, Budenheim, DE;
Mark Mattingley-Scott, Heidelberg, DE;
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A monolithic silicon Josephson junction can be fabricated from a silicon wafer using semiconductor technologies such as gas immersion laser doping and smart cut technology. Rather than using a superconducting metal for the junction electrodes, silicon that has been highly doped with boron can serve as the superconducting material for the electrodes of the Josephson junction. A region of the silicon wafer that has not been doped serves as the tunnel barrier. Fabrication of the Josephson junction does not require a metallization process since the electrodes and tunnel barrier are formed from highly doped silicon and non-doped silicon, respectively. The single-crystal structure of the resulting Josephson junction yields low two-level system (TLS) noise.