The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Aug. 20, 2019
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Jung Hong Min, Yongin-si, KR;

Dae Hyun Kim, Yongin-si, KR;

Dong Uk Kim, Yongin-si, KR;

Hyun Min Cho, Yongin-si, KR;

Se Young Kim, Yongin-si, KR;

Seung A Lee, Yongin-si, KR;

Hyung Rae Cha, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/821 (2025.01); H10H 20/831 (2025.01); H10H 20/857 (2025.01); H10H 29/14 (2025.01);
U.S. Cl.
CPC ...
H10H 20/821 (2025.01); H10H 20/8312 (2025.01); H10H 20/857 (2025.01); H10H 29/142 (2025.01);
Abstract

A light emitting element may include an emission stacked pattern including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer that are stacked in a longitudinal direction of the emission stacked pattern. The active layer may include a first surface that is in contact with the first conductive semiconductor layer in the longitudinal direction of the emission stacked pattern, and a second surface that is opposite the first surface and is in contact with the second conductive semiconductor layer. The first conductive semiconductor layer may include at least one n-type semiconductor layer, and the second conductive semiconductor layer may include at least one p-type semiconductor layer. Further, the first surface of the active layer may be located at a point corresponding to −20% to +20% of half of a total length of the emission stacked pattern in the longitudinal direction of the emission stacked pattern.


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