The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Feb. 06, 2024
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Abstract
Disclosed is an infrared detecting device with a high SNR. The infrared detecting device includes a semiconductor substrate; a first layer formed on the semiconductor substrate and having a first conductivity type; a light receiving layer formed on the first layer; and a second layer formed on the light receiving layer and having a second conductivity type. The first layer includes, in the stated order: a layer containing AlInSb; a layer having a film thickness tin nanometers and containing AlInSb; and a layer containing AlInSb, where t, x(1), x(2), and y(1) satisfy the following relations: for j=1, 2, 0<t≤2360×(y(1)−x(j))−240 (0.11≤y(1)−x(j)≤0.19), 0<t≤−1215×(y(1)−x(j))+427 (0.19<y(1)−x(j)≤0.33), and 0<x(j)<0.18.