The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Jul. 25, 2023
Applicant:

Trina Solar Co., Ltd., Jiangsu, CN;

Inventor:

Zigang Wang, Jiangsu, CN;

Assignee:

Trina Solar Co., Ltd., Jiangsu, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 71/00 (2025.01); B23K 26/0622 (2014.01); B23K 26/067 (2006.01); B23K 26/354 (2014.01); B23K 26/402 (2014.01); H10F 77/20 (2025.01); H10F 77/30 (2025.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
H10F 71/1221 (2025.01); B23K 26/0624 (2015.10); B23K 26/0676 (2013.01); B23K 26/354 (2015.10); B23K 26/402 (2013.01); H10F 77/219 (2025.01); H10F 77/311 (2025.01); B23K 2101/40 (2018.08);
Abstract

The present disclosure provides a solar cell and a preparation method thereof, belongs to the technical field of solar cells. The preparation method of a solar cell according to the present disclosure includes: forming a passivation structure on a contact silicon layer at a back side of a silicon substrate; where the back side is a side opposite to a light incident side; removing the passivation structure located at least part of an electrode region by laser to form a contact opening, melting at least part of the contact silicon layer at the contact opening by laser, and solidifying the molten contact silicon layer to form a re-solidified structure; where the electrode region is a region configured to form a back electrode; and electroplating to form a back electrode in the electrode region on the back side of the contact silicon layer.


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