The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Jan. 30, 2020
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Tadayuki Kimura, Kanagawa, JP;

Takatoshi Kameshima, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 25/065 (2023.01); H01L 25/07 (2006.01); H01L 25/18 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10F 39/802 (2025.01); H10B 61/00 (2023.02); H10F 39/8053 (2025.01); H10F 39/806 (2025.01); H10N 50/85 (2023.02);
Abstract

A solid-state image pickup apparatus includes a first structure having a first substrate, and a pixel region including a plurality of pixels which is formed in the first substrate, outputs pixel signals according to amounts of electric charges generated by photoelectric conversion, and is arrayed in a two-dimensional grid, and a second structure that is stacked on the first structure, and has a second substrate, and a logic circuit and a non-volatile memory that are formed in the second substrate, in which a first protective film having a property of inhibiting entrance of hydrogen is formed on an end surface of a storage element included in the non-volatile memory which end surface is on a side facing the first structure, and a second protective film having the property of inhibiting entrance of hydrogen is formed on a side surface of the storage element.


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