The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Jan. 09, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Younggu Jin, Suwon-si, KR;

Seunghyun Lee, Suwon-si, KR;

Youngchan Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/18 (2025.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/18 (2025.01); H10F 39/8067 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01);
Abstract

A CMOS image sensor includes: a substrate including a plurality of unit pixel regions. The substrate includes: a first surface configured to receive light; a second surface opposite to the first surface; a deep device isolation portion disposed in the substrate and configured to isolate the plurality of unit pixel regions from each other, wherein the deep device isolation portion extends from the first surface toward the second surface and has a first depth measured from the first surface; a photoelectric conversion portion formed in the substrate in each of the plurality of unit pixel regions; and a first vertical reflection structure disposed in each of the plurality of unit pixel regions of the substrate and surrounded by the deep device isolation portion in a plan view.


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