The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Jun. 22, 2021
Applicant:

Ams-osram Ag, Premstätten, AT;

Inventor:

Ewald Wachmann, Kainbach, AT;

Assignee:

AMS-OSRAM AG, Premstaetten, AT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 71/00 (2025.01); H10F 30/221 (2025.01); H10F 39/00 (2025.01); H10F 39/10 (2025.01); H10F 77/20 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/107 (2025.01); H10F 30/221 (2025.01); H10F 39/802 (2025.01); H10F 71/00 (2025.01); H10F 77/241 (2025.01); H10F 39/189 (2025.01);
Abstract

The present disclosure relates to a photodiode device, which overcomes the drawbacks of conventional devices like increased dark currents. The photodiode device includes a semiconductor substrate, at least one doped well of a first type of electric conductivity at a main surface of the substrate and at least one doped region of a second type of electric conductivity being adjacent to the doped well. The at least one doped well and the at least one doped region are electrically contactable. On a portion of an upper surface of the doped well a protection structure is arranged. The protection structure protects the upper surface of the underlying doped well from an etching process for removing a spacer layer.


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