The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Aug. 29, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Tatsuo Shimizu, Shinagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
Provided is a method for manufacturing a semiconductor device, the method including: performing first ion implantation ion-implanting a p-type impurity into a silicon carbide layer; performing second ion implantation ion-implanting carbon (C) into the silicon carbide layer; performing a first heat treatment activating the p-type impurity; performing a first oxidation treatment oxidizing the silicon carbide layer; performing an etching treatment etching the silicon carbide layer in an atmosphere containing hydrogen gas; forming a first metal film containing at least one metal element selected from the group consisting of nickel, palladium, platinum, and chromium; performing a second heat treatment causing the silicon carbide layer to react with the first metal film to form a metal silicide layer containing the at least one metal element; and forming a second metal film having a chemical composition different from a chemical composition of the first metal film.