The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Jul. 26, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Inhyun Song, Suwon-si, KR;

Ohseong Kwon, Hwaseong-si, KR;

Junggil Yang, Hwaseong-si, KR;

Jooho Jung, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/115 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 84/83 (2025.01); H10D 30/014 (2025.01); H10D 64/01 (2025.01); H10D 64/017 (2025.01); H10D 84/0128 (2025.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01);
Abstract

A semiconductor device includes: a substrate including an active region extending in a first direction; a gate electrode extending in a second direction and intersecting the active region, the gate electrode including first electrode layer(s) and a second electrode layer; channel layers spaced apart from each other in a third direction and at least partially surrounded by the gate electrode; source/drain regions, with at least one source/drain region on each side of the gate electrode and electrically connected to the channel layers; and air gap regions in the second electrode layer between the channel layers and between a lowermost channel layer and the active region in the third direction. The first electrode layer(s) or the second electrode layer has a first thickness between adjacent ones of the channel layers in the third direction, and has a second thickness greater than the first thickness on side surfaces of the channel layers.


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