The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Nov. 20, 2023
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Yasutaka Nakazawa, Tochigi, JP;

Junichi Koezuka, Tochigi, JP;

Takashi Hamochi, Tochigi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H01L 21/768 (2006.01); H10B 12/00 (2023.01); H10D 64/62 (2025.01); H10D 84/08 (2025.01); H10D 84/80 (2025.01); H10D 84/83 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10D 87/00 (2025.01); H10D 88/00 (2025.01); H10D 99/00 (2025.01); H10F 39/12 (2025.01); H10H 29/10 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6755 (2025.01); H01L 21/76843 (2013.01); H01L 21/76856 (2013.01); H10B 12/312 (2023.02); H10D 30/6713 (2025.01); H10D 30/6729 (2025.01); H10D 30/6734 (2025.01); H10D 30/6757 (2025.01); H10D 64/62 (2025.01); H10D 86/423 (2025.01); H10D 86/60 (2025.01); H10D 87/00 (2025.01); H10D 99/00 (2025.01); H10F 39/12 (2025.01); H10H 29/10 (2025.01); H10D 84/08 (2025.01); H10D 84/811 (2025.01); H10D 84/83 (2025.01); H10D 88/00 (2025.01);
Abstract

A semiconductor device including an oxide semiconductor film that includes a transistor with excellent electrical characteristics is provided. It is a semiconductor device including a transistor. The transistor includes a gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, and a second insulating film. The source electrode and the drain electrode each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film contains copper, the first conductive film and the third conductive film include a material that inhibits diffusion of copper, and an end portion of the second conductive film includes a region containing copper and silicon.


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