Semiconductor apparatus and manufacturing method for semiconductor apparatus

Abstract

Provided is a semiconductor apparatus which can achieve high reliability while reducing parasitic capacitance and can prevent a gate leakage defect while suppressing an increase in manufacturing costs. The semiconductor apparatus includes a substrate having a buried insulating film and a semiconductor layer provided on the buried insulating film and formed with a semiconductor element, a gate electrode provided on the semiconductor layer and having a wiring extending from a central portion of the semiconductor layer to each end portion of the semiconductor layer in a case where the substrate is viewed from above, a source contact via and a drain contact via which are provided on the semiconductor layer, and a protruding portion provided near an area where the end portion of the semiconductor layer intersects the wiring of the gate electrode, the protruding portion including a material identical to that of the semiconductor layer and protruding outward from a side surface of the semiconductor layer. At least part of the end portion of the semiconductor layer has thick film regions each having a larger film thickness than a portion of the semiconductor layer immediately below the gate electrode. The source contact via and the drain contact via are provided in areas other than the thick film regions.