The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
May. 05, 2021
Infineon Technologies Austria Ag, Villach, AT;
Hyeongnam Kim, Chandler, AZ (US);
Mohamed Imam, Chandler, AZ (US);
INFINEON TECHNOLOGIES AUSTRIA AG, Villach, AT;
Abstract
One or more semiconductor structures comprising a hole draining structure are provided. A semiconductor structure has a first layer formed over a substrate. The first layer has a first concentration of a metal material. The semiconductor structure has a second layer formed over the first layer. The second layer has a second concentration of the metal material different than the first concentration of the metal material. The semiconductor structure has a hole draining structure formed from a superlattice formed between the first layer and the second layer. The hole draining structure has a concentration of the metal material increasing towards the first layer and decreasing towards the second layer.